GaAs 에피 성장 기술의 최근 연구 동향

New Trends in GaAs Epitaxial Techniques

저자
박성주, 조경익 / 기초기술연구부
권호
3권 4호 (통권 10)
논문구분
일반 논문
페이지
3-0
발행일자
1988.12.15
DOI
10.22648/ETRI.1988.J.030401
초록
Epilayer growing process has been recognized as a key technology for successful GaAs based devices and integrations. These may include HEMT, multiple quantum well structures, band gap engineering, and quantum confinement heterostructures. The fabrication of epilayers in these devices must meet very stringent requirements in terms of crystallinity, composition, film thickness and interface quality. In particular, the quality of interfaces is getting more important because the film thickness, and flatness, roughness and stability at interface of ultrathin films cause critical effects on the device performance. This article reviews the current status of modern epitaxial techniques which have been developed in the last few years. First, the new techniques PLE, GI, MEE, TSL based on MBE technique will be reviewed and their technical importance will be stressed. Secondly, MOMBE, GSMBE, CBE which combine the advantages of MBE and MOCVD will also be discussed. Thirdly, the new sophisticated epitaxial technique, ALE, of which mechanism is totally different from others, will also be reviewed. Finally, areas which should be exploited more extensively to accomplish these techniques will be addressed.
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